Defects can be used to improve spintronic devices
Scientists at the Ningbo Institute of Materials Technology and Engineering (NIMTE) and additional departments of the Chinese Academy of Sciences, University of Science and Technology of China, ShanghaiTech University and Beihang University have turned a longstanding challenge in electronics – material defects – into a quantum-enhanced solution, paving the way for new-generation ultra-low-power spintronic devices.
Spintronics takes advantage of two additional quantum properties: spin angular momentum, which can be imagined as a built-in “up” or “down” orientation of the electron, and orbital angular momentum, which describes how electrons move around atomic nuclei. By using these extra degrees of freedom, spintronic devices can store more data in smaller spaces, operate faster, consume less energy, and retain information even when the power is switched off. A longstanding challenge in spintronics has been the role of material defects. Introducing imperfections into a material can sometimes make it easier to “write” data into memory bits by reducing the current needed, but this typically comes at a cost: electrical resistance increases, spin Hall conductivity declines, and overall power consumption goes up. This trade-off has been a major obstacle to developing ultra-low-power spintronic devices.
Source: https://www.spintronics-info.com/defects-can-be-used-improve-spintronic-devices
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