Interfacial Ising superconductivity in a graphene‑capped gallium trilayer for potential spintronics applications
Researchers from Penn State, University of Oxford, Zhejiang University, Diamond Light Source and the University of North Texas have engineered an atomically confined gallium trilayer between graphene and silicon carbide that hosts robust Ising‑type superconductivity under strong in‑plane magnetic fields. This interface‑driven superconducting state in a light‑element heterostructure opens intriguing opportunities for integrating superconductivity with spin‑based functionalities in future spintronics devices.
The device consists of just three atomic layers of gallium sandwiched between a graphene overlayer and a 6H‑SiC(0001) substrate, grown using plasma‑free confinement epitaxy assisted by a carbon buffer layer. Within this ultra‑thin “quantum well,” superconductivity emerges at low temperatures, while the graphene capping layer protects the gallium from oxidation and contamination and the SiC substrate provides a structurally and electronically active interface. The result is a clean, strongly confined 2D superconducting channel whose properties are dominated by interfacial quantum interactions.
Source: https://www.spintronics-info.com/interfacial-ising-superconductivity-graphene-capped-gallium-trilayer-potential
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