CrSBr spin transistor switches by voltage or magnetism, reaches million-percent on/off ratio
Researchers at Boston College, University of Chemistry and Technology Prague and Japan’s National Institute for Materials Science have built a spin transistor that can be switched either electrically or magnetically from within a single two-dimensional device, using the van der Waals magnetic semiconductor chromium sulfur bromide (CrSBr). The device reaches an electrical on/off ratio of a million percent and a magnetic on/off ratio of 3,000 percent, which the team says is well above what prior spin-transistor efforts have achieved.
The work targets the “von Neumann bottleneck”: the energy and speed cost of continually shuttling data, including the billions of parameters in large AI models, between separate compute and memory blocks on a chip. A long-standing goal in spintronics is a single “spin transistor” device that combines a magnetic bit with a semiconducting switch, so it can compute and store data at once. Historically, building one has meant physically joining two different materials, a magnet and a semiconductor, together. “By engineering a single van der Waals crystal, CrSBr, that inherently possesses both semiconducting and magnetic properties, we eliminate losses at interfaces entirely,” said Zdeněk Sofer, a materials-synthesis specialist at the University of Chemistry and Technology Prague.
Source: https://www.spintronics-info.com/crsbr-spin-transistor-switches-voltage-or-magnetism-reaches-million-percent
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